2003. 8. 4 1/2 semiconductor technical data KDR531T schottky barrier type diode revision no : 1 high frequency rectification. switching regulators, converters, choppers. features low forward voltage : v f max=0.47v. maximum rating (ta=25 ) dim millimeters a b d e tsm 2.9 0.2 1.6+0.2/-0.1 0.70 0.05 0.4 0.1 2.8+0.2/-0.3 1.9 0.2 0.95 0.16 0.05 0.00-0.10 0.25+0.25/-0.15 c f g h i j k 0.60 l 0.55 a f g g d k k b e c l h j j i 2 1 3 + _ + _ + _ + _ + _ 1. nc 2. anode 3. cathode 21 3 electrical characteristics (ta=25 ) type name marking lot no. t 3 characteristic symbol rating unit repetitive peak reverse voltage v rrm 30 v reverse voltage v r 30 v average forward current i o 1 a non-repetitive peak surge current i fsm 10 a junction temperature t j 125 storage temperature range t stg -55 125 characteristic symbol test condition min. typ. max. unit forward voltage v f i f =0.5a - 0.35 0.40 v i f =1a - 0.42 0.47 v reverse current i r v r =15v - - 500 a v r =30v - - 1000 total capacitance c t v r =10v, f=1mhz - 35 - pf reverse recovery time t rr i f =i r =100ma - - 15 ns
2003. 8. 4 2/2 KDR531T revision no : 1 reverse current i (ma) r reverse voltage v (v) r i - v rr forward voltage v (v) forward current i (a) f f i - v f f c - v r r reverse voltage v (v) interterminal capacitance c (pf) 1 10 2 10 3 2 10 f=1mhz 1 3 10 30 5 0.01 0.1 1 012345 0.01 0 5 1015202530 0.1 1 10 10 ta=25 c ta=50 c ta=75 c ta=100 c ta=125 c ta=125 c ta=100 c ta=75 c ta=50 c ta=25 c
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